The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
V (BR)DSS (sometimes called BVDSS) is the drain-source voltage at which no more than the specified drain current will flow at the specified temperature and with zero gate-source voltage. This tracks ...
Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...
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