KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
There's been no greater act of magic in technology than the sleight of hand performed by Moore's Law. Electronic components that once fit in your palm have long gone atomic, vanishing from our world ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
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In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
New chipmaking systems boost the energy-efficient performance of Gate-All-Around transistors and wiring at 2nm and beyondViva™ pure radical ...
The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...
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