Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

This innovation successfully addresses the challenge of dual-mode operation in non-volatile memory, offering compatibility with silicon-based semiconductor processes for large-scale integration. The ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness of just 30 nm, including top and bottom electrodes. Using scandium-doped ...

Ferroelectric Non-Volatile Photonic-Electronic Memory. (a) Schematic of memory structure based on micro-ring resonator. (b) Cross-sectional schematic of the memory. (c) Microscopic photo of the memory ...

A new technical paper titled “Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes” was published by researchers at Samsung and Seoul National University. Find the ...

A new technical paper titled “Toward Capacitive In-Memory-Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware” was published by researchers at Tampere ...

A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology ...