Here, a power amplifier circuit has been designed using MOSFET to produce 100 W output to drive a load of about 8 Ω. Here, a power amplifier circuit has been designed using MOSFET to produce 100 W ...
JFETs are, almost invariably, depletion mode devices, which means that there will be some drain current at a zero-applied gate-source potential. This current will decrease in a fairly linear manner as ...
The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
This course covers the designing and building of advanced electronic circuits and systems. The approach to design is through advanced application of sensor interfacing, instrumentation and low-noise ...
The power transistor must be chosen to provide fast response while also withstanding high power dissipation. Several electrical and thermal characteristics must be considered: 1. An array of N current ...
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