A study led by Nagoya University in Japan revealed that a simple thermal reaction of gallium nitride (GaN) with metallic magnesium (Mg) results in the formation of a distinctive superlattice structure ...
Wurtzite III-V nitride semiconductors have been broadly adopted as electronic and optical devices due to their high stability and direct and wide bandgap. Gallium nitride (GaN) has attracted ...
A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...
A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...
Polarization engineering has revolutionized the photonic and electronic landscape of III-nitride semiconductors over the past decades. However, recent revelations of giant ferroelectric polarization ...
Atomera’s oxygen-based epitaxial technology is addressing problematic parasitic channels in GaN-on-silicon HEMTs. Facing a ...
A comprehensive review of laser additive manufacturing (LAM) of metallic lattice structures demonstrates how advanced design strategies, processing control, and material innovations significantly ...
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