GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
Texas Instruments recently expanded its high-voltage power management portfolio with next-generation 650- and 600-V gallium-nitride (GaN) field-effect transistors (FETs) for automotive and industrial ...
Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024. Transphorm, the GaN ...
Renesas Electronics announced the space industry’s first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride FET driver for DC/DC power supplies in small satellites (smallsats) and ...
Built on Proven SuperGaN Technology, 650-V Gen IV Plus Devices Deliver Robust Performance with Superior Thermal Efficiency and Ultra-Low Power Loss TOKYO--(BUSINESS WIRE)-- Renesas Electronics ...
1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
For GaN FETs applications in 48V power systems, one existing approach is to use a DSP based digital solution to realize high frequency and high efficiency designs. This is in large part due to the ...
EPC Space, the radiation-hardened (RH) gallium nitride (GaN) power device specialist, has launched the EPC7030MSH. The EPC7030MSH is a radiation-hardened 300 V gallium nitride FET Credit: EPC Space A ...
Editors note: This book, “GaN Transistors for Efficient Power Conversion”, published by Power Conversion Publications helped me learn a great deal more about the benefits of the GaN process as well as ...
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