EPC Highlights Gen 7 GaN for AI Infrastructure and GaN Integrated Circuits for Robotics at APEC 2026

Enabling scalable power for AI computing and next-generation robotics Our new GaN integrated circuits enable more ...
EDN

GaN prolongs short-circuit withstand time

Gallium nitride (GaN) semiconductor devices must pass stringent robustness tests to survive extreme conditions with both high current and high voltage. Here, short-circuits survivability is the most ...
Business Wire

Transphorm’s GaN First to Hit Short Circuit Robustness Milestone Key to Motor Drive Applications

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Hosted on MSN

Tiny gallium nitride transistors boost chip speed and efficiency in new 3D design

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.
Electronic Design

GaN, SiC Semis Plus Improved Circuit Designs Fuel Power Converters

Sponsored by Texas Instruments: The push for EVs is accelerating, but challenges persist in terms of their widespread acceptance, particularly when it comes to charging infrastructure. WBG ...