CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...

YOKOHAMA, Japan, Aug. 7, 2023 /PRNewswire/ -- Fujitsu Semiconductor Memory Solution Limited announced the launch of an I2C-interface 512Kbit FeRAM with automotive grade, MB85RC512LY. Evaluation ...

Although not as prevalent as Flash memory storage, ferroelectric RAM (FeRAM) offers a range of benefits over the former, mostly in terms of endurance and durability, which makes it popular for a range ...

What would life be like if you had access to random access memory that coupled the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off? Pretty darn ...

To migrate these devices from laboratory research to large-scale industrial fabrication is still a challenge given the industry's massive investment in silicon technologies and infrastructure. Silicon ...

CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node advancing this energy-saving technology closer to commercialisation ...

CEA-Leti research engineers demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into back-end-of-line (BEOL) at 22nm FD-SoI technology node.

To allow data storage capacity up to five times greater than the current materials used in Ferroelectric Random Access Memory (FeRAM) production, Fujitsu Microelectronics America Inc. (FMA) and the ...

Toshiba today in Tokyo unveiled a prototype of a new kind of FeRAM (Ferroelectric RAM) [JP] that might pave the way for more powerful mobile devices and PCs in the future. Toshiba has been doing ...

Hynix Semiconductor Inc. today claimed to be the first memory maker to develop a commercially applicable ferroelectric RAM (FeRAM). FeRAM is a non-volatile, low power, high-density and high speed ...