Figure 1: Current-induced magnetization switching and second harmonic measurements in the Al 2 O 3 (20 nm)/Cr-TI(7 nm)/GaAs(substrate) structure device. Figure 2: Top-gate Hall bar configuration and ...
Figure 1: Schematic view and images of gate-controlled all-fibre graphene devices. Figure 2: Gate-variable properties of the all-fibre graphene device using a monolayer graphene. Figure 3: Device ...
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