onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the ...

Gas insulation plays a central role in the design and operation of high voltage equipment by utilising dielectric gases to prevent undesired electrical discharges and ensure reliable performance.

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.

Central Semiconductor, manufacturer of discrete semiconductors, recently released the CMXSTB Series surface-mount stabistors packaged in the SOT-26 case. This new series consists of the 1.2-V ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...